Development of a temperature compensated light sensor

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Supervisor:
Dr. Plesz Balázs
Department of Electron Devices

Just like on any semiconductor device, the thermal change also has effects on the photodetectors operation. On the market, solar cell based sensors have a 0.15 %/°C inaccuracy. Unfortunately, in case of precise measurements, this value is not negligible. My goal is to develop a monolith photodetector, which compensates the effects of thermal changes already integrated in the sensor. Accordingly, while using the sensor, there is no need to measure the temperature in purpose of temperature compensation.

In the first part of my thesis I study the theoretical background of the p-n junction, and its thermal sensitivity in details. After that I broadly survey the potentials of the temperature compensation, and then finally I come to the main topic of my essay, the inspection of the monolith sensors thermal compensation.

With my calculations, I came to the conclusion, that besides the temperature dependence, the sensors operation depends also on the intensity change. Hence I had to find a way to reduce this effect to the minimum. In my thesis I tried my best to select the parameters of the characteristics and define the R(T) temperature-dependent and R(G) intensity-dependent resistivity function, with which I could compensate the sensor.

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