(TELC) modelling of thermal-electrical circuits

OData support
Dr. Pohl László
Department of Electron Devices

One of the most dominant component of the development of integrated circuit technology is size reduction. By now we have reached the size range, where the further size reduction is more and more difficult, or even impossible. One of the main reasons is the dissipation, which is the generated heat-energy that the working device produces. However this effect can be used for information storage and transmission because, in nanometer sizes the effects take comparable time to electrical effects. The circuits that use dissipation heat effect are called thermal-electric (logical) circuits (TELC).

The idea of TELC was inspired by the vanadium dioxide. This material is a semiconductor at room-temperature, but if its temparature goes above 67°C its specific resistance suddenly falls three-to-four orders of magnitude so, its properties become metallic. In order to create thermal-electric circuits using the vanadium dioxide, it is inevitable to set up an accurate device model for the structure wished to be realized, and to perform precise thermal-electric simulations, because in a complex circuit the slightest heat-effect could trigger the transition of the vanadium dioxide’s material structure.

In my thesis I summarize the material properties of vanadium dioxide, the process of its metal-semiconductor transition and the possibilities of usage. I present the operating principle of phonsistor, the basic unit of the thermal-electric circuits and the concept of thermal-electric logical circuits. I summarize the operating principle and the usage of SUNRED 2.2 and VSUN-3 simulator programmes. After the theoretical part I present some possible VO2 resistor structure models, analyse the simulation results, and interpret the occured phenomena. At the end I present a possible logical gate structure based on a VO2 resistor and the simulation results of its behaviour.


Please sign in to download the files of this thesis.